Irf840 Schaltplan. Irf840 mosfet are available at mouser electronics. Vdss 500v min static drain source on resistance 0 85fi max descrition designed for high voltage high speed switching power applic ations such as switching regulators converters solenoid and relay drivers.
Motorola alldatasheet datasheet datasheet search site for electronic components and semiconductors integrated circuits diodes triacs and other semiconductors. B irf840 8a 500v 0 850 ohm n channel power mosfet this n channel enhancement mode silicon gate power field effect transistor is an advanced power mosfet designed tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. Absolute maximum ratings ta 25 c symbol vdss vgs id i dm pd tj tstg parameter.
Irf840 500 v 0 85 ω 8 a symbol parameter value unit vds drain source voltage vgs 0 500 v vdgr drain gate voltage rgs 20 kω 500 v vgs gate source voltage 20 v id drain current continuos at tc 25 c 8a id drain current continuos at tc 100 c 5 1 a idm l drain current pulsed 32 a ptot total dissipation at tc 25 c 125 w.
2002 fairchild semiconductor corporation irf840 rev. N channel enhancement mode silicon gate tmos power field effect transistor irf840 datasheet irf840 circuit irf840 data sheet. B irf840 8a 500v 0 850 ohm n channel power mosfet this n channel enhancement mode silicon gate power field effect transistor is an advanced power mosfet designed tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. Irf840 500 v 0 85 ω 8 a symbol parameter value unit vds drain source voltage vgs 0 500 v vdgr drain gate voltage rgs 20 kω 500 v vgs gate source voltage 20 v id drain current continuos at tc 25 c 8a id drain current continuos at tc 100 c 5 1 a idm l drain current pulsed 32 a ptot total dissipation at tc 25 c 125 w.
