Mosfet Schaltung. 500v drain source resistance rds is 0 85 ohms rise time and fall time is 23ns and 20ns available in to 220 package note. The metal oxide semiconductor field effect transistor mosfet mos fet or mos fet also known as the metal oxide silicon transistor mos transistor or mos is a type of insulated gate field effect transistor that is fabricated by the controlled oxidation of a semiconductor typically silicon the voltage of the covered gate determines the electrical conductivity of the device.
Mosfet symbol showing the integral reverse p n junction diode 4 5 a pulsed diode forward current a ism 18 body diode voltage vsd tj 25 c is 4 5 a vgs 0 v b 1 6v body diode reverse recovery time trr tj 25 c if 3 1 a di dt 100 a μs b 320 640 ns body diode reverse recovery charge qrr 1 0 2 0μc. The gate electrode is electrically insulated from the main semiconductor by a thin layer of insulating material glass seriously. This insulated metal gate is like a plate of a capacitor which has an extremely high input resistance as high as almost infinite.
8a gate threshold voltage vgs th is 10v limit 20v drain to source breakdown voltage.
Complete technical details can be found at the irf840 datasheet linked at the bottom of the page. Mosfet is a voltage controlled field effect transistor that differs from a jfet. 500v drain source resistance rds is 0 85 ohms rise time and fall time is 23ns and 20ns available in to 220 package note. Klare verständliche beschreibung hervorragend.
